BZX84C9V1-GT1
vs
BZX84-C9V1212
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
NXP SEMICONDUCTORS
Package Description
R-PDSO-G3
R-PDSO-G3
Reach Compliance Code
unknown
unknown
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.35 W
0.25 W
Qualification Status
Not Qualified
Not Qualified
Reference Voltage-Nom
9.1 V
9.1 V
Surface Mount
YES
YES
Technology
ZENER
ZENER
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Voltage Tol-Max
5%
5%
Working Test Current
5 mA
5 mA
Base Number Matches
2
1
Pbfree Code
Yes
ECCN Code
EAR99
HTS Code
8541.10.00.50
JESD-609 Code
e3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
0.5 µA
Terminal Finish
TIN
Voltage Temp Coeff-Max
7 mV/°C
Compare BZX84C9V1-GT1 with alternatives
Compare BZX84-C9V1212 with alternatives