BZX84C3V9-T3 vs BZX84C3V9-H feature comparison

BZX84C3V9-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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BZX84C3V9-H Formosa Microsemi Co Ltd

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Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD FORMOSA MICROSEMI CO LTD
Package Description R-PDSO-G3
Reach Compliance Code unknown unknown
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.35 W 0.3 W
Qualification Status Not Qualified
Reference Voltage-Nom 3.9 V 3.9 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Tol-Max 5% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Dynamic Impedance-Max 90 Ω
Knee Impedance-Max 600 Ω
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Reference Standard MIL-STD-19500; MIL-STD-750
Reverse Current-Max 3 µA
Reverse Test Voltage 1 V
Voltage Temp Coeff-Max -2.5 mV/°C

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