BZX79-C33116
vs
BZX79C33-TP
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
MICRO COMMERCIAL COMPONENTS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.4 W
0.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Voltage-Nom
33 V
33 V
Reverse Current-Max
0.05 µA
0.00005 µA
Surface Mount
NO
NO
Technology
ZENER
ZENER
Terminal Finish
TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Voltage Temp Coeff-Max
33.4 mV/°C
Voltage Tol-Max
5%
6.06%
Working Test Current
2 mA
2 mA
Base Number Matches
1
1
Part Package Code
DO-35
Package Description
O-LALF-W2
Pin Count
2
Additional Feature
METALLURGICAL BONDED
Dynamic Impedance-Max
80 Ω
Forward Voltage-Max (VF)
0.9 V
Knee Impedance-Max
325 Ω
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Reverse Test Voltage
24 V
Time@Peak Reflow Temperature-Max (s)
10
Compare BZX79-C33116 with alternatives
Compare BZX79C33-TP with alternatives