BZX55-C3V9T/R vs BZX55C3V9-BP feature comparison

BZX55-C3V9T/R NXP Semiconductors

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BZX55C3V9-BP Micro Commercial Components

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS MICRO COMMERCIAL COMPONENTS
Part Package Code DO-35 DO-35
Package Description O-LALF-W2 O-LALF-W2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TEMPERATURE COEFFICIENT IS TYPICAL
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 85 Ω
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 175 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard CECC50005-005
Reference Voltage-Nom 3.9 V 3.9 V
Reverse Current-Max 2 µA
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Temp Coeff-Max
Voltage Tol-Max 5% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

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