BZW06-85 vs MXLP6KE100A feature comparison

BZW06-85 Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet

MXLP6KE100A Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Clamping Voltage-Max 137 V
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 85.5 V 85.5 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Base Number Matches 9 2
Package Description PLASTIC, T-18, 2 PIN
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 105 V
Breakdown Voltage-Min 95 V
Case Connection ISOLATED
Configuration SINGLE
JESD-30 Code O-PALF-W2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 1.47 W
Qualification Status Not Qualified
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position AXIAL

Compare MXLP6KE100A with alternatives