BZW06-53
vs
P4KE51AA0G
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
EIC SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
65.1 V
53.6 V
Breakdown Voltage-Min
58.9 V
48.5 V
Breakdown Voltage-Nom
62 V
51 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
85 V
70.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
DO-204AL
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
600 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
1 W
Reference Standard
MIL-STD-202; TS-16949
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
53 V
43.6 V
Reverse Current-Max
1 µA
Reverse Test Voltage
53 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin (Sn)
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
5
1
Package Description
O-PALF-W2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Compare BZW06-53 with alternatives
Compare P4KE51AA0G with alternatives