BZW06-33B
vs
JAN1N6169
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
MICROSS COMPONENTS
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Samacsys Manufacturer |
Taiwan Semiconductor
|
|
| Breakdown Voltage-Max |
41 V
|
|
| Breakdown Voltage-Min |
37.1 V
|
117.325 V
|
| Breakdown Voltage-Nom |
39.05 V
|
130 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
53.9 V
|
187.74 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-15
|
|
| JESD-30 Code |
O-PALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
1.7 W
|
7.5 W
|
| Rep Pk Reverse Voltage-Max |
33.3 V
|
98.8 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
Matte Tin (Sn)
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Base Number Matches |
12
|
4
|
| Additional Feature |
|
LOW IMPEDANCE
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500/516
|
| Reverse Current-Max |
|
5 µA
|
|
|
|
Compare BZW06-33B with alternatives
Compare JAN1N6169 with alternatives