BZW06-28
vs
BZW04-28
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
EIC SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max
34.7 V
34.7 V
Breakdown Voltage-Min
31.4 V
31.4 V
Breakdown Voltage-Nom
33.05 V
33.05 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
45.7 V
45.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
DO-41
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
600 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
1 W
Reference Standard
MIL-STD-202; TS-16949
Rep Pk Reverse Voltage-Max
28.2 V
28.2 V
Reverse Current-Max
1 µA
Reverse Test Voltage
28.2 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
32
Samacsys Manufacturer
Taiwan Semiconductor
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BZW06-28 with alternatives
Compare BZW04-28 with alternatives