BZW06-128R0 vs BZW06-128 feature comparison

BZW06-128R0 Taiwan Semiconductor

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BZW06-128 Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Package Description DO-15, 2 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 158 V
Breakdown Voltage-Min 143 V
Breakdown Voltage-Nom 150 V
Case Connection ISOLATED
Clamping Voltage-Max 207 V 207 V
Configuration SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AC
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.7 W
Rep Pk Reverse Voltage-Max 128 V 128 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 2 2
Peak Reflow Temperature (Cel) 260

Compare BZW06-128R0 with alternatives

Compare BZW06-128 with alternatives