BZW04P342
vs
P4KE400AHB0G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Nom
410 V
400 V
Clamping Voltage-Max
548 V
548 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-41
DO-204AL
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Rep Pk Reverse Voltage-Max
342 V
342 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
12
1
Package Description
DO-41, 2 PIN
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
420 V
Breakdown Voltage-Min
380 V
Case Connection
ISOLATED
JESD-609 Code
e3
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Reference Standard
AEC-Q101; UL RECOGNIZED
Terminal Finish
MATTE TIN
Compare P4KE400AHB0G with alternatives