BZW04P13 vs BZW04P13 feature comparison

BZW04P13 Galaxy Microelectronics

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BZW04P13 MDE Semiconductor Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD MDE SEMICONDUCTOR INC
Part Package Code DO-41
Reach Compliance Code unknown unknown
Breakdown Voltage-Nom 15.4 V 15.4 V
Clamping Voltage-Max 21.2 V 21.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 12.8 V 12.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 8
Package Description DO-41, 2 PIN
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max 16.94 V
Breakdown Voltage-Min 13.86 V
Case Connection ISOLATED
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Reference Standard MIL-STD-750, UL LISTED
Reverse Current-Max 5 µA
Reverse Test Voltage 12.8 V