BZW04-94 vs MAP6KE130A feature comparison

BZW04-94 MDE Semiconductor Inc

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MAP6KE130A Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Transferred
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Package Description DO-41, 2 PIN PLASTIC, T-18, 2 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max 116 V 137 V
Breakdown Voltage-Min 105 V 124 V
Breakdown Voltage-Nom 110.5 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 152 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 5 W
Reference Standard MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max 94 V 111 V
Reverse Current-Max 5 µA
Reverse Test Voltage 94 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 17 2
Pbfree Code No
Pin Count 2
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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