BZW04-70HB0G vs BZW04-70B0 feature comparison

BZW04-70HB0G Taiwan Semiconductor

Buy Now Datasheet

BZW04-70B0 Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 86.1 V 86.1 V
Breakdown Voltage-Min 77.9 V 77.9 V
Breakdown Voltage-Nom 82 V 82 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 113 V 113 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 70.1 V 70.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish PURE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 2
Rohs Code Yes
JESD-609 Code e3

Compare BZW04-70HB0G with alternatives

Compare BZW04-70B0 with alternatives