BZW04-70BHB0G vs BZW04-70B feature comparison

BZW04-70BHB0G Taiwan Semiconductor

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BZW04-70B General Instrument Corp

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD GENERAL INSTRUMENT CORP
Package Description O-PALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 86.1 V 86.1 V
Breakdown Voltage-Min 77.9 V 77.9 V
Breakdown Voltage-Nom 82 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 113 V 113 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 70.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Qualification Status Not Qualified
Reverse Current-Max 5 µA

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Compare BZW04-70B with alternatives