BZW04-70BA1G vs P4KE82CA feature comparison

BZW04-70BA1G Taiwan Semiconductor

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P4KE82CA New Jersey Semiconductor Products Inc

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Package Description O-PALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max 86.1 V
Breakdown Voltage-Min 77.9 V 77.9 V
Breakdown Voltage-Nom 82 V
Case Connection ISOLATED
Clamping Voltage-Max 113 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W
Rep Pk Reverse Voltage-Max 70.1 V 70.1 V
Surface Mount NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 57

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