BZW04-5V8BHR0G
vs
BZW04-5V8BR1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
DO-41, 2 PIN
O-PALF-W2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Samacsys Manufacturer
Taiwan Semiconductor
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max
7.14 V
7.14 V
Breakdown Voltage-Min
6.45 V
6.45 V
Breakdown Voltage-Nom
6.8 V
6.8 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
10.5 V
10.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-204AL
DO-204AL
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
5.8 V
5.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
10
Base Number Matches
1
1
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