BZW04-5V8BHR0G vs BZW04-5V8BR1 feature comparison

BZW04-5V8BHR0G Taiwan Semiconductor

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BZW04-5V8BR1 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description DO-41, 2 PIN O-PALF-W2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 7.14 V 7.14 V
Breakdown Voltage-Min 6.45 V 6.45 V
Breakdown Voltage-Nom 6.8 V 6.8 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 10.5 V 10.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 5.8 V 5.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 1

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