BZW04-5V8BHB0G vs BZW04-5V8BA0 feature comparison

BZW04-5V8BHB0G Taiwan Semiconductor

Buy Now Datasheet

BZW04-5V8BA0 Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 7.14 V 7.14 V
Breakdown Voltage-Min 6.45 V 6.45 V
Breakdown Voltage-Nom 6.8 V 6.8 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 10.5 V 10.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 5.8 V 5.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish PURE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Rohs Code Yes
JESD-609 Code e3

Compare BZW04-5V8BHB0G with alternatives

Compare BZW04-5V8BA0 with alternatives