BZW04-58HB0G
vs
BZW04-58B0G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max
71.4 V
71.4 V
Breakdown Voltage-Min
64.6 V
64.6 V
Breakdown Voltage-Nom
68 V
68 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
92 V
92 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-204AL
DO-204AL
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
58.1 V
58.1 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
PURE TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Rohs Code
JESD-609 Code
e3
Compare BZW04-58HB0G with alternatives
Compare BZW04-58B0G with alternatives