BZW04-40BHB0G vs BZW04-40B feature comparison

BZW04-40BHB0G Taiwan Semiconductor

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BZW04-40B

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Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Package Description O-PALF-W2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
kg CO2e/kg 8.54
Average Weight (mg) 283
CO2e (mg) 2416.82
Category CO2 Kg 8.54
Compliance Temperature Grade Military: -55C to +175C
EU RoHS Version RoHS 2 (2015/863/EU)
EU RoHS Exemptions 7(a), 7(c)-I
Candidate List Date 2024-06-27
SVHC Over MCV 7439-92-1
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V6.40
Qualifications AEC-Q101
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 49.4 V
Breakdown Voltage-Min 44.7 V
Breakdown Voltage-Nom 47.05 V
Case Connection ISOLATED
Clamping Voltage-Max 64.8 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 40.2 V
Surface Mount NO
Technology AVALANCHE
Terminal Finish PURE TIN
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 1

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