BZW04-37BA1G
vs
BZW04-37B
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
|
| Package Description |
O-PALF-W2
|
|
| Reach Compliance Code |
compliant
|
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE, PRSM-MIN
|
|
| Breakdown Voltage-Max |
45.2 V
|
|
| Breakdown Voltage-Min |
40.9 V
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
|
| JEDEC-95 Code |
DO-41
|
|
| JESD-30 Code |
O-PALF-W2
|
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity |
BIDIRECTIONAL
|
|
| Power Dissipation-Max |
1 W
|
|
| Rep Pk Reverse Voltage-Max |
36.8 V
|
|
| Surface Mount |
NO
|
|
| Technology |
AVALANCHE
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
|
|
|
|
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