BZW04-342BA0 vs BZW04P342B feature comparison

BZW04-342BA0 Taiwan Semiconductor

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BZW04P342B EIC Semiconductor Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD EIC SEMICONDUCTOR CO LTD
Package Description O-PALF-W2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 420 V
Breakdown Voltage-Min 380 V
Breakdown Voltage-Nom 400 V 400 V
Case Connection ISOLATED
Clamping Voltage-Max 548 V 548 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 342 V 342 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 12

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