BZW04-299 vs P4KE33CAHR1G feature comparison

BZW04-299 MDE Semiconductor Inc

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P4KE33CAHR1G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC TAIWAN SEMICONDUCTOR CO LTD
Package Description DO-41, 2 PIN DO-41, 2 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 368 V 34.7 V
Breakdown Voltage-Min 332 V 31.4 V
Breakdown Voltage-Nom 350 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 482 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard MIL-STD-750, UL LISTED AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 299 V 28.2 V
Reverse Current-Max 5 µA
Reverse Test Voltage 299 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 16 1
JESD-609 Code e3
Terminal Finish MATTE TIN

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