BZW04-213BHB0G
vs
BZW04-213BHR0G
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
O-PALF-W2
|
DO-41, 2 PIN
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
|
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
|
| Breakdown Voltage-Max |
263 V
|
263 V
|
| Breakdown Voltage-Min |
237 V
|
237 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-204AL
|
DO-204AL
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
400 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Reference Standard |
AEC-Q101
|
AEC-Q101
|
| Rep Pk Reverse Voltage-Max |
213 V
|
213 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
PURE TIN
|
TIN
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Samacsys Manufacturer |
|
Taiwan Semiconductor
|
| JESD-609 Code |
|
e3
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare BZW04-213BHB0G with alternatives
Compare BZW04-213BHR0G with alternatives