BZW04-20B vs BZW04-20BHR0G feature comparison

BZW04-20B Galaxy Microelectronics

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BZW04-20BHR0G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
Breakdown Voltage-Nom 24 V 24 V
Clamping Voltage-Max 33.2 V 33.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 20.5 V 20.5 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 16 1
Package Description DO-41, 2 PIN
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 25.2 V
Breakdown Voltage-Min 22.8 V
Case Connection ISOLATED
JESD-609 Code e3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 10

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