BZW04-11B
vs
BZW04-110B
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.50
|
|
Breakdown Voltage-Nom |
13.05 V
|
130.5 V
|
Clamping Voltage-Max |
18.2 V
|
179 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-41
|
DO-41
|
JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
Non-rep Peak Rev Power Dis-Max |
400 W
|
400 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
1 W
|
1 W
|
Rep Pk Reverse Voltage-Max |
11.1 V
|
111 V
|
Surface Mount |
NO
|
NO
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
16
|
9
|
|
|
|