BZW04-111 vs MAP6KE130AE3 feature comparison

BZW04-111 EIC Semiconductor Inc

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MAP6KE130AE3 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Clamping Voltage-Max 179 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 5 W
Rep Pk Reverse Voltage-Max 111 V 111 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Package Description ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
Factory Lead Time 40 Weeks
Breakdown Voltage-Max 137 V
Breakdown Voltage-Min 124 V
Case Connection ISOLATED
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Qualification Status Not Qualified
Terminal Finish MATTE TIN

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