BZW04-110B vs P4KE13CA-E3/54 feature comparison

BZW04-110B Galaxy Microelectronics

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P4KE13CA-E3/54 Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
Breakdown Voltage-Nom 130.5 V 13.05 V
Clamping Voltage-Max 179 V 18.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1.5 W
Rep Pk Reverse Voltage-Max 111 V 11.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 2
Pbfree Code Yes
Part Package Code DO-41
Package Description O-PALF-W2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 13.7 V
Breakdown Voltage-Min 12.4 V
Case Connection ISOLATED
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Qualification Status Not Qualified
Terminal Finish MATTE TIN

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