BZW04-102B vs BZW04-102B feature comparison

BZW04-102B MDE Semiconductor Inc

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BZW04-102B LRC Leshan Radio Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer MDE SEMICONDUCTOR INC LESHAN RADIO CO LTD
Package Description DO-41, 2 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max 126 V
Breakdown Voltage-Min 114 V
Breakdown Voltage-Nom 120 V 120 V
Case Connection ISOLATED
Clamping Voltage-Max 165 V 165 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max 102 V 108.7 V
Reverse Current-Max 5 µA
Reverse Test Voltage 102 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1