BZV85C3V6 vs BZV85-C3V6,113 feature comparison

BZV85C3V6 North American Philips Discrete Products Div

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BZV85-C3V6,113 NXP Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Configuration SINGLE SINGLE
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 15 Ω 15 Ω
JESD-609 Code e0 e3
Number of Elements 1 1
Operating Temperature-Max 200 °C 200 °C
Power Dissipation-Max 1.3 W 1 W
Reference Voltage-Nom 3.6 V 3.6 V
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN
Voltage Tol-Max 5% 5%
Working Test Current 60 mA 60 mA
Base Number Matches 4 2
Part Package Code DO-4
Package Description ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Manufacturer Package Code SOD66
Factory Lead Time 4 Weeks
Additional Feature CAPACITANCE IS CAPTURED FROM THE GRAPH
Case Connection ISOLATED
Diode Element Material SILICON
JEDEC-95 Code DO-41
JESD-30 Code O-LALF-W2
Moisture Sensitivity Level 1
Number of Terminals 2
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard CECC50005-010
Reverse Current-Max 50 µA
Technology ZENER
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Voltage Temp Coeff-Max -1 mV/°C

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