BZV85-C18,133
vs
MV1N4746APE3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
MICROSEMI CORP
|
| Part Package Code |
DO-4
|
DO-41
|
| Package Description |
ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
|
O-PALF-W2
|
| Pin Count |
2
|
2
|
| Manufacturer Package Code |
SOD66
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Factory Lead Time |
4 Weeks
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
20 Ω
|
|
| JEDEC-95 Code |
DO-41
|
DO-204AL
|
| JESD-30 Code |
O-LALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Reference Voltage-Nom |
18 V
|
18 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
TIN
|
MATTE TIN
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
15 mA
|
14 mA
|
| Base Number Matches |
2
|
1
|
| Operating Temperature-Min |
|
-65 °C
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare BZV85-C18,133 with alternatives
-
BZV85-C18,133 vs 1N4746AT/B
-
BZV85-C18,133 vs 1N4746A
-
BZV85-C18,133 vs 1N4746AT/R
-
BZV85-C18,133 vs 1N4746AT50A
-
BZV85-C18,133 vs 1N4746A,113
-
BZV85-C18,133 vs 1N4746ATR
-
BZV85-C18,133 vs JAN1N3026B-1
-
BZV85-C18,133 vs JANTXV1N3026B-1
-
BZV85-C18,133 vs JANTX1N3026B-1
Compare MV1N4746APE3 with alternatives