BZV55C6V8L0G
vs
BZV55-C6V8,115
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
NXP SEMICONDUCTORS
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
ZENER DIODE
|
ZENER DIODE
|
Dynamic Impedance-Max |
8 Ω
|
15 Ω
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Operating Temperature-Max |
175 °C
|
200 °C
|
Power Dissipation-Max |
0.5 W
|
0.4 W
|
Reference Voltage-Nom |
6.8 V
|
6.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
ZENER
|
ZENER
|
Terminal Finish |
MATTE TIN OVER NICKEL
|
TIN
|
Voltage Tol-Max |
5%
|
5%
|
Working Test Current |
5 mA
|
5 mA
|
Base Number Matches |
1
|
2
|
Part Package Code |
|
MELF
|
Package Description |
|
HERMETIC SEALED, GLASS PACKAGE-2
|
Pin Count |
|
2
|
Manufacturer Package Code |
|
SOD80C
|
Factory Lead Time |
|
4 Weeks
|
Samacsys Manufacturer |
|
NXP
|
Case Connection |
|
ISOLATED
|
JESD-30 Code |
|
O-LELF-R2
|
Number of Terminals |
|
2
|
Operating Temperature-Min |
|
-65 °C
|
Package Body Material |
|
GLASS
|
Package Shape |
|
ROUND
|
Package Style |
|
LONG FORM
|
Peak Reflow Temperature (Cel) |
|
260
|
Polarity |
|
UNIDIRECTIONAL
|
Qualification Status |
|
Not Qualified
|
Reverse Current-Max |
|
2 µA
|
Terminal Form |
|
WRAP AROUND
|
Terminal Position |
|
END
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
Voltage Temp Coeff-Max |
|
4.5 mV/°C
|
|
|
|
Compare BZV55C6V8L0G with alternatives
Compare BZV55-C6V8,115 with alternatives