BZV55C6V2-G vs BZV55C6V2L1G feature comparison

BZV55C6V2-G Sangdest Microelectronics (Nanjing) Co Ltd

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BZV55C6V2L1G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete End Of Life
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description O-LELF-R2
Reach Compliance Code unknown compliant
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code O-LELF-R2
Number of Elements 1 1
Number of Terminals 2
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified
Reference Voltage-Nom 6.2 V 6.2 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form WRAP AROUND
Terminal Position END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Tol-Max 6.45% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Dynamic Impedance-Max 10 Ω
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Terminal Finish MATTE TIN OVER NICKEL

Compare BZV55C6V2-G with alternatives

Compare BZV55C6V2L1G with alternatives