BZV55C5V1-G
vs
BZV55C5V1L1G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
End Of Life
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
O-LELF-R2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JESD-30 Code |
O-LELF-R2
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Package Body Material |
GLASS
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Voltage-Nom |
5.1 V
|
5.1 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Form |
WRAP AROUND
|
|
| Terminal Position |
END
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Voltage Tol-Max |
5.88%
|
5%
|
| Working Test Current |
5 mA
|
5 mA
|
| Base Number Matches |
2
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Dynamic Impedance-Max |
|
35 Ω
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
175 °C
|
| Terminal Finish |
|
MATTE TIN OVER NICKEL
|
|
|
|
Compare BZV55C5V1-G with alternatives
Compare BZV55C5V1L1G with alternatives