BZV55C4V3L0G
vs
BZX55C4V3
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
75 Ω
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Reference Voltage-Nom |
4.3 V
|
4.3 V
|
| Surface Mount |
YES
|
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
MATTE TIN OVER NICKEL
|
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
5 mA
|
90 mA
|
| Base Number Matches |
1
|
43
|
| Operating Temperature-Min |
|
-65 °C
|
| Polarity |
|
UNIDIRECTIONAL
|
|
|
|
Compare BZV55C4V3L0G with alternatives