BZV55C3V0-G
vs
BZV55-C3V0,115
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
NXP SEMICONDUCTORS
Package Description
O-LELF-R2
HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code
unknown
compliant
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JESD-30 Code
O-LELF-R2
O-LELF-R2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.5 W
0.4 W
Qualification Status
Not Qualified
Not Qualified
Reference Voltage-Nom
3 V
3 V
Surface Mount
YES
YES
Technology
ZENER
ZENER
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Voltage Tol-Max
6.67%
5%
Working Test Current
5 mA
5 mA
Base Number Matches
2
2
Part Package Code
MELF
Pin Count
2
Manufacturer Package Code
SOD80C
ECCN Code
EAR99
HTS Code
8541.10.00.50
Factory Lead Time
4 Weeks
Dynamic Impedance-Max
95 Ω
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
200 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
10 µA
Terminal Finish
TIN
Voltage Temp Coeff-Max
Compare BZV55C3V0-G with alternatives
Compare BZV55-C3V0,115 with alternatives