BZV55C27-T1
vs
BZV55-C27,135
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
NXP SEMICONDUCTORS
|
Package Description |
O-LELF-R2
|
HERMETIC SEALED, GLASS PACKAGE-2
|
Reach Compliance Code |
unknown
|
compliant
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
ZENER DIODE
|
ZENER DIODE
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
0.5 W
|
0.4 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Voltage-Nom |
27 V
|
27 V
|
Surface Mount |
YES
|
YES
|
Technology |
ZENER
|
ZENER
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Voltage Tol-Max |
7.04%
|
5%
|
Working Test Current |
5 mA
|
2 mA
|
Base Number Matches |
2
|
2
|
Part Package Code |
|
MELF
|
Pin Count |
|
2
|
Manufacturer Package Code |
|
SOD80C
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.10.00.50
|
Factory Lead Time |
|
4 Weeks
|
Dynamic Impedance-Max |
|
80 Ω
|
JESD-609 Code |
|
e3
|
Operating Temperature-Max |
|
200 °C
|
Operating Temperature-Min |
|
-65 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Reverse Current-Max |
|
0.05 µA
|
Terminal Finish |
|
TIN
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
Voltage Temp Coeff-Max |
|
25.3 mV/°C
|
|
|
|
Compare BZV55C27-T1 with alternatives
Compare BZV55-C27,135 with alternatives
-
BZV55-C27,135 vs BZV55C27
-
BZV55-C27,135 vs BZV55-C27
-
BZV55-C27,135 vs BZV55C27TRL
-
BZV55-C27,135 vs BZV55C27-G
-
BZV55-C27,135 vs BZV55-C27,115
-
BZV55-C27,135 vs BZV55C27-GT1
-
BZV55-C27,135 vs BZV55C27TR
-
BZV55-C27,135 vs 933699620135
-
BZV55-C27,135 vs BZV55C27TRL13