BZV55C24-T1 vs BZV55-C24,135 feature comparison

BZV55C24-T1 Sangdest Microelectronics (Nanjing) Co Ltd

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BZV55-C24,135 NXP Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD NXP SEMICONDUCTORS
Package Description O-LELF-R2 HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code unknown compliant
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code O-LELF-R2 O-LELF-R2
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.4 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 24.2 V 24.2 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Voltage Tol-Max 5.79% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 2 2
Part Package Code MELF
Pin Count 2
Manufacturer Package Code SOD80C
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 4 Weeks
Dynamic Impedance-Max 70 Ω
JESD-609 Code e3
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 0.05 µA
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
Voltage Temp Coeff-Max 22 mV/°C

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Compare BZV55-C24,135 with alternatives