BZV55C18T4
vs
BZV55-C18,135
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA INC
|
NXP SEMICONDUCTORS
|
| Package Description |
O-LELF-N2
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Base Number Matches |
2
|
2
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
MELF
|
| Pin Count |
|
2
|
| Manufacturer Package Code |
|
SOD80C
|
| Factory Lead Time |
|
4 Weeks
|
| Case Connection |
|
ISOLATED
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| Diode Type |
|
ZENER DIODE
|
| Dynamic Impedance-Max |
|
45 Ω
|
| JESD-30 Code |
|
O-LELF-R2
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
200 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity |
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
|
0.4 W
|
| Qualification Status |
|
Not Qualified
|
| Reference Voltage-Nom |
|
17.95 V
|
| Reverse Current-Max |
|
0.05 µA
|
| Surface Mount |
|
YES
|
| Technology |
|
ZENER
|
| Terminal Finish |
|
TIN
|
| Terminal Form |
|
WRAP AROUND
|
| Terminal Position |
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Voltage Temp Coeff-Max |
|
16 mV/°C
|
| Voltage Tol-Max |
|
5%
|
| Working Test Current |
|
5 mA
|
|
|
|
Compare BZV55C18T4 with alternatives
Compare BZV55-C18,135 with alternatives
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BZV55-C18,135 vs BZV55-C18
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BZV55-C18,135 vs BZV55C18-G
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BZV55-C18,135 vs BZV55C18TRL13
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BZV55-C18,135 vs BZV55C18T1
-
BZV55-C18,135 vs BZV55C18TRL
-
BZV55-C18,135 vs BZV55C18-T1
-
BZV55-C18,135 vs BZV55-C18,115