BZV55C13L1
vs
BZV55C13-GT1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
End Of Life
|
Obsolete
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
26 Ω
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Reference Voltage-Nom |
13 V
|
13 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
MATTE TIN OVER NICKEL
|
|
| Voltage Tol-Max |
5%
|
6.42%
|
| Working Test Current |
5 mA
|
5 mA
|
| Base Number Matches |
1
|
2
|
| Package Description |
|
O-LELF-R2
|
| Case Connection |
|
ISOLATED
|
| JESD-30 Code |
|
O-LELF-R2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Polarity |
|
UNIDIRECTIONAL
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
WRAP AROUND
|
| Terminal Position |
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare BZV55C13L1 with alternatives
Compare BZV55C13-GT1 with alternatives