BZV55-C5V1112 vs BZV55C5V1-G feature comparison

BZV55-C5V1112 NXP Semiconductors

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BZV55C5V1-G Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description O-LELF-R2 O-LELF-R2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code O-LELF-R2 O-LELF-R2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 5.1 V 5.1 V
Reverse Current-Max 2 µA
Surface Mount YES YES
Technology ZENER ZENER
Terminal Finish TIN
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Voltage Temp Coeff-Max 1.2 mV/°C
Voltage Tol-Max 5% 5.88%
Working Test Current 5 mA 5 mA
Base Number Matches 1 2
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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