BZV55-C4V7,135
vs
BZV55C4V7-GT1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code
MELF
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
O-LELF-R2
Pin Count
2
Manufacturer Package Code
SOD80C
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Samacsys Manufacturer
NXP
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
Dynamic Impedance-Max
80 Ω
JESD-30 Code
O-LELF-R2
O-LELF-R2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
Operating Temperature-Min
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.4 W
0.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Voltage-Nom
4.7 V
4.7 V
Reverse Current-Max
3 µA
Surface Mount
YES
YES
Technology
ZENER
ZENER
Terminal Finish
TIN
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Voltage Temp Coeff-Max
0.2 mV/°C
Voltage Tol-Max
5%
6.38%
Working Test Current
5 mA
5 mA
Base Number Matches
2
2
Compare BZV55-C4V7,135 with alternatives
Compare BZV55C4V7-GT1 with alternatives