BZV55-C27112
vs
BZV55C27
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
EIC SEMICONDUCTOR CO LTD
|
| Package Description |
O-LELF-R2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
ZENER DIODE
|
|
| JESD-30 Code |
O-LELF-R2
|
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
200 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
GLASS
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
0.4 W
|
|
| Qualification Status |
Not Qualified
|
|
| Reference Voltage-Nom |
27 V
|
|
| Reverse Current-Max |
0.05 µA
|
|
| Surface Mount |
YES
|
|
| Technology |
ZENER
|
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
WRAP AROUND
|
|
| Terminal Position |
END
|
|
| Voltage Temp Coeff-Max |
25.3 mV/°C
|
|
| Voltage Tol-Max |
5%
|
|
| Working Test Current |
2 mA
|
|
| Base Number Matches |
1
|
29
|
|
|
|
Compare BZV55-C27112 with alternatives