BZV55-C18,115 vs BZV55C18TR feature comparison

BZV55-C18,115 NXP Semiconductors

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BZV55C18TR Central Semiconductor Corp

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Rohs Code Yes No
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS CENTRAL SEMICONDUCTOR CORP
Part Package Code MELF
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Manufacturer Package Code SOD80C
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 4 Weeks
Samacsys Manufacturer NXP
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 45 Ω 45 Ω
JESD-30 Code O-LELF-R2 O-LELF-R2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 200 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 17.95 V 18 V
Reverse Current-Max 0.05 µA
Surface Mount YES YES
Technology ZENER ZENER
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Voltage Temp Coeff-Max 16 mV/°C
Voltage Tol-Max 5% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 2 1
Pbfree Code No

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Compare BZV55C18TR with alternatives