BZV55-C11,115 vs BZV55C11L1G feature comparison

BZV55-C11,115 NXP Semiconductors

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BZV55C11L1G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Transferred End Of Life
Ihs Manufacturer NXP SEMICONDUCTORS TAIWAN SEMICONDUCTOR CO LTD
Part Package Code MELF
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Manufacturer Package Code SOD80C
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 4 Weeks
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 20 Ω 20 Ω
JESD-30 Code O-LELF-R2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2
Operating Temperature-Max 200 °C 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.5 W
Qualification Status Not Qualified
Reference Voltage-Nom 11 V 11 V
Reverse Current-Max 0.1 µA
Surface Mount YES YES
Technology ZENER ZENER
Terminal Finish TIN MATTE TIN OVER NICKEL
Terminal Form WRAP AROUND
Terminal Position END
Time@Peak Reflow Temperature-Max (s) 30
Voltage Temp Coeff-Max 9 mV/°C
Voltage Tol-Max 5% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 2 1

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Compare BZV55C11L1G with alternatives