BZV55-C10112 vs BZT52C10-E3-08 feature comparison

BZV55-C10112 NXP Semiconductors

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BZT52C10-E3-08 Vishay Intertechnologies

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS VISHAY INTERTECHNOLOGY INC
Package Description O-LELF-R2 SOD-123, 2 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code O-LELF-R2 R-PDSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.5 W
Qualification Status Not Qualified
Reference Voltage-Nom 10 V 10 V
Reverse Current-Max 0.2 µA 0.1 µA
Surface Mount YES YES
Technology ZENER ZENER
Terminal Finish TIN Matte Tin (Sn)
Terminal Form WRAP AROUND GULL WING
Terminal Position END DUAL
Voltage Temp Coeff-Max 8 mV/°C 0.8 mV/°C
Voltage Tol-Max 5% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 1 1
Pin Count 2
Factory Lead Time 11 Weeks
Samacsys Manufacturer Vishay
Dynamic Impedance-Max 15 Ω
Knee Impedance-Max 70 Ω
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reverse Test Voltage 7.5 V
Time@Peak Reflow Temperature-Max (s) 10

Compare BZV55-C10112 with alternatives

Compare BZT52C10-E3-08 with alternatives