BZT585B10TQ-13 vs BZX84B10F2 feature comparison

BZT585B10TQ-13 Diodes Incorporated

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BZX84B10F2 Yangzhou Yangjie Electronics Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer DIODES INC YANGZHOU YANGJIE ELECTRONICS CO LTD
Package Description R-PDSO-F2 R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-10-26
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 10 Ω
Forward Voltage-Max (VF) 1.1 V
JESD-30 Code R-PDSO-F2 R-PDSO-G3
JESD-609 Code e3 e3
Knee Impedance-Max 150 Ω
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.35 W 0.35 W
Reference Standard AEC-Q101
Reference Voltage-Nom 10 V 10 V
Rep Pk Reverse Voltage-Max 7 V
Reverse Current-Max 0.2 µA
Reverse Test Voltage 7 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Finish MATTE TIN TIN
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Voltage Temp Coeff-Max 7 mV/°C
Voltage Tol-Max 2% 2%
Working Test Current 5 mA 5 mA
Base Number Matches 1 1

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