BZT55B3V9
vs
1N5990CURE3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
MICROSEMI CORP
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
85 Ω
|
|
| JESD-30 Code |
O-GELF-R2
|
O-LELF-R2
|
| JESD-609 Code |
e3
|
|
| Knee Impedance-Max |
600 Ω
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Reference Voltage-Nom |
3.9 V
|
3.9 V
|
| Reverse Current-Max |
2 µA
|
|
| Reverse Test Voltage |
1 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
Matte Tin (Sn)
|
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Voltage Tol-Max |
2.05%
|
2%
|
| Working Test Current |
5 mA
|
5 mA
|
| Base Number Matches |
9
|
4
|
| Package Description |
|
O-LELF-R2
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| JEDEC-95 Code |
|
DO-213AA
|
|
|
|
Compare BZT55B3V9 with alternatives
Compare 1N5990CURE3 with alternatives