BZT52H-C4V7,115 vs 1N5230DRL feature comparison

BZT52H-C4V7,115 NXP Semiconductors

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1N5230DRL Motorola Mobility LLC

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Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS MOTOROLA INC
Part Package Code SOD-123 DO-35
Package Description PLASTIC PACKAGE-2 O-LALF-W2
Pin Count 2 2
Manufacturer Package Code SOD123F
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 4 Weeks
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 500 Ω
JESD-30 Code R-PDSO-F2 O-LALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 200 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.375 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 4.7 V 4.7 V
Surface Mount YES NO
Technology ZENER ZENER
Terminal Finish TIN
Terminal Form FLAT WIRE
Terminal Position DUAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Voltage Tol-Max 6.38% 1%
Working Test Current 5 mA 20 mA
Base Number Matches 2 3
Case Connection ISOLATED
JEDEC-95 Code DO-204AH
Knee Impedance-Max 1900 Ω
Operating Temperature-Min -65 °C
Reverse Current-Max 5 µA
Voltage Temp Coeff-Max 1.41 mV/°C

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