BZT52C2V0S-H vs BZT52C2V0S feature comparison

BZT52C2V0S-H Formosa Microsemi Co Ltd

Buy Now Datasheet

BZT52C2V0S Jiangsu Changjiang Electronics Technology Co Ltd

Buy Now Datasheet
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer FORMOSA MICROSEMI CO LTD JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 100 Ω 100 Ω
JESD-30 Code R-PDSO-G2
Knee Impedance-Max 600 Ω
Number of Elements 1 1
Number of Terminals 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.2 W 0.2 W
Reference Standard MIL-STD-750
Reference Voltage-Nom 2 V 2 V
Reverse Current-Max 150 µA
Reverse Test Voltage 1 V
Surface Mount YES YES
Technology ZENER
Terminal Form GULL WING
Terminal Position DUAL
Voltage Temp Coeff-Max
Voltage Tol-Max 4.5% 4.5%
Working Test Current 5 mA 5 mA
Base Number Matches 1 1

Compare BZT52C2V0S-H with alternatives

Compare BZT52C2V0S with alternatives