BZT52C2V0S-H vs BZT52C2V0S feature comparison

BZT52C2V0S-H Formosa Microsemi Co Ltd

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BZT52C2V0S Galaxy Semi-Conductor Co Ltd

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Part Life Cycle Code Active Active
Ihs Manufacturer FORMOSA MICROSEMI CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 100 Ω 100 Ω
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Knee Impedance-Max 600 Ω 600 Ω
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.2 W 0.2 W
Reference Standard MIL-STD-750
Reference Voltage-Nom 2 V 2 V
Reverse Current-Max 150 µA 150 µA
Reverse Test Voltage 1 V 1 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Voltage Temp Coeff-Max
Voltage Tol-Max 4.5% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 1 1
Moisture Sensitivity Level 1

Compare BZT52C2V0S-H with alternatives

Compare BZT52C2V0S with alternatives